Based on the hydro-dynamics energy transport model, the influence of geometrical structure parameters on hot-carrier-effect immunity in deep-submicron grooved gate PMOSFET is studied and explained in terms of device interior physics mechanism. These investigated structure parameters include effective channel length, concave corner and negative junction depth induced by change of source/drain junction depth and groove depth respectively. The research results indicate that the hot-carrier-effect is depressed deeply for grooved gate PMOSFET even in deep and super-deep-sub-micron region, and with the increase of concave corner and negative junction depth, the hot-carrier-effect immunity becomes better. It is mainly because that the structure parameters influence the electric field distribution in device and corner effect and so do the transportation of carriers.
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