Ding Yaogen, Peng Jun, Zhu Yunsu, Shi Shaoming, Yin Xiuling, Zhang Yuelan, Zhao Jingjun, Jiang Zhenbo, Bao Mingqiang. RESEARCH ON THE S-BAND MULTI-BEAM KLYSTRON[J]. Journal of Electronics & Information Technology, 1996, 18(2): 221-224.
Citation:
Ding Yaogen, Peng Jun, Zhu Yunsu, Shi Shaoming, Yin Xiuling, Zhang Yuelan, Zhao Jingjun, Jiang Zhenbo, Bao Mingqiang. RESEARCH ON THE S-BAND MULTI-BEAM KLYSTRON[J]. Journal of Electronics & Information Technology, 1996, 18(2): 221-224.
Ding Yaogen, Peng Jun, Zhu Yunsu, Shi Shaoming, Yin Xiuling, Zhang Yuelan, Zhao Jingjun, Jiang Zhenbo, Bao Mingqiang. RESEARCH ON THE S-BAND MULTI-BEAM KLYSTRON[J]. Journal of Electronics & Information Technology, 1996, 18(2): 221-224.
Citation:
Ding Yaogen, Peng Jun, Zhu Yunsu, Shi Shaoming, Yin Xiuling, Zhang Yuelan, Zhao Jingjun, Jiang Zhenbo, Bao Mingqiang. RESEARCH ON THE S-BAND MULTI-BEAM KLYSTRON[J]. Journal of Electronics & Information Technology, 1996, 18(2): 221-224.
Multi-beam klystron (MBK) is a new type of high power microwave amplifier. The S-band multi-beam broadband klystron doveloped in Institute of Electronics of Academia Sinica (IEAS) is described in this paper. The research progresses on the design and calculation of the tube, multi-beam electron gun and focusing system, broadband output circuit are given. For beam voltage of 19kV and bias voltage of control electrode of --7kV, the measured performance of the tube are as follows: the beam current of 32.25A, beam perveance of 12.3P, DC beam transmission of 91.8, peak power of 252kW, average power of 3.5kW, the efficiency of 41, the gain of 49dB, the band width of 9.1 with 1.7dB power variation.
Gelvich E A, et al. IEEE Trans. on MTT, 1993, MTT-41(1): 15-19.[2][2][3]Pobedonostsev A S. Multi-beam Microwave Tubes, IEEE MTT-s, Digest, 1993, 1131-1134.[4]丁耀根,彭钧.电子科学学刊,1996, 18(1): 64-71.
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