OBSERVATION OF FINE LOW DIMENSIONAL MODULATED FRINGES IN GaAs/AlxGa1-xAs MULTILAYER HETEROSTRUCTURES GROWN BY MBI

Fan Rongtuan; C. J. Humphreys

Volume 12 Issue 1

Jan. 1990

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Article Navigation > Journal of Electronics & Information Technology > 1990 > 12(1): 93-99

Fan Rongtuan, C. J. Humphreys. OBSERVATION OF FINE LOW DIMENSIONAL MODULATED FRINGES IN GaAs/AlxGa1-xAs MULTILAYER HETEROSTRUCTURES GROWN BY MBI[J]. Journal of Electronics & Information Technology, 1990, 12(1): 93-99.

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Fan Rongtuan, C. J. Humphreys. OBSERVATION OF FINE LOW DIMENSIONAL MODULATED FRINGES IN GaAs/AlxGa1-xAs MULTILAYER HETEROSTRUCTURES GROWN BY MBI[J]. Journal of Electronics & Information Technology, 1990, 12(1): 93-99.

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OBSERVATION OF FINE LOW DIMENSIONAL MODULATED FRINGES IN GaAs/AlxGa1-xAs MULTILAYER HETEROSTRUCTURES GROWN BY MBI

Fan Rongtuan^{①;C.J.Humphreys},
C. J. Humphreys

Received Date: 1987-12-29
Rev Recd Date: 1989-06-09
Publish Date: 1990-01-19

Abstract

Abstract

Fine low dimensional modulated fringes (FLDMF) by named in GaAs/ AlxGa1-xAs multilayer heterostructures using transmission electron microscopy (TEM) have been observed. Philips EM400ST and JEOL EM4000EX were used in this work. The FLDMF with equal width were discovered within the buffer layer and also within the two adjacent superlattice layers of GaAs/AlGaAs The width with 9.1 is GaAs fringes, 12 is AlGaAs fringes. Some results from the density analysis of the fringes using microdensitometer are presented. Otherwise lattice image of GaAs/AlxGa1-xAs multilayer heterostructures and analytic results of composition in GaAs/AlxGa1-xAs multilayer heterostructures by using the techniques of energy dispersive X-ray analysis (EDX) have been given.

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References(1)

References

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