FFT IMAGE APPLICATION TO DETECTION AND ANALYSIS OF THE DEFECTS IN GaAs MATERIALS

Zhang Fugui

Volume 10 Issue 4

Jul. 1988

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Article Navigation > Journal of Electronics & Information Technology > 1988 > 10(4): 377-380

Hongchang CHEN, Qian XU, Ruiyang HUANG, Xiaotao CHENG, Zheng WU. User Identification Across Social Networks Based on User Trajectory[J]. Journal of Electronics & Information Technology, 2018, 40(11): 2758-2764. doi: 10.11999/JEIT180130

Citation:

Zhang Fugui. FFT IMAGE APPLICATION TO DETECTION AND ANALYSIS OF THE DEFECTS IN GaAs MATERIALS[J]. Journal of Electronics & Information Technology, 1988, 10(4): 377-380.

Citation:

Zhang Fugui. FFT IMAGE APPLICATION TO DETECTION AND ANALYSIS OF THE DEFECTS IN GaAs MATERIALS[J]. Journal of Electronics & Information Technology, 1988, 10(4): 377-380.

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FFT IMAGE APPLICATION TO DETECTION AND ANALYSIS OF THE DEFECTS IN GaAs MATERIALS

Zhang Fugui

Received Date: 1986-12-19
Rev Recd Date: 1988-02-22
Publish Date: 1988-07-19

Abstract

Abstract

The presence of inhomogeneous distribution of defects in GaAs wafers strongly limits the reproducibility of IC fabrication processes. In this paper, we report for the first time a Fourier transformation image testing approach, called FTIT, for the two dimensional evaluation of the disorder in a wafer, as it appears in infrared transmission timages. The Fourier analysis of the cell structure reveals a dominat statistical rectangular organization of the dislocations along 110 and 010 directions. The and defined in the paper are typical organization of the cells to evaluate quantitatively the properties of IC materials.

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References(1)

References

J. P. Fillard.[J].Comptes Rendus de la Confrence, Karinzawl, France, July.1984,:-[2]V. Milutinovic, Computer 19, 10(1986), 235-240.[3]J. Bonnafe.[J].et al., DRIP Symposium, ed. by J .P. Fillard, Materials Sciences Monographs, n31, Elsevier.1985,:-[4]M. Kunt,Traitement Numerique des Signaux, Dunod, 1981, pp. 101-110.[5]Zhang Fugui, These de Doctoral, Universite des Sciences et Techniques du Langudoc Montpellier, France, 1986, pp. 98-110.[6]C. G. Lendaris, G. L.Stanley, Proc. IEEE, 2(1970), 50-58.[7]J. Logowski, et al., Semi-insulating III-V Materials, Conf. Kah. nee ta, 1984, U. S. A., pp. 200-205.[8]M. P. Scott.[J].DRIP Materials Science Monographs, n31 Elsevier, ed. by J. P. Fillard.1985,:-M. Bonnet.[J].et al., DRIP Materials Science Monographs, n31 Elsevier, ed by J. P. Fillard.1985,:-

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