A STUDY OF THE HYDROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYER FILMS

Zhang Tongjun

Volume 11 Issue 6

Nov. 1989

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Zhang Tongjun. A STUDY OF THE HYDROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYER FILMS[J]. Journal of Electronics & Information Technology, 1989, 11(6): 656-660.

Citation:

Zhang Tongjun. A STUDY OF THE HYDROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYER FILMS[J]. Journal of Electronics & Information Technology, 1989, 11(6): 656-660.

Zhang Tongjun. A STUDY OF THE HYDROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYER FILMS[J]. Journal of Electronics & Information Technology, 1989, 11(6): 656-660.

Citation:

Zhang Tongjun. A STUDY OF THE HYDROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYER FILMS[J]. Journal of Electronics & Information Technology, 1989, 11(6): 656-660.

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A STUDY OF THE HYDROGEN CONTENT IN a-Si:H/a-SiNx:H MULTILAYER FILMS

Zhang Tongjun

Received Date: 1987-09-29
Rev Recd Date: 1989-04-10
Publish Date: 1989-11-19

Abstract

Abstract

The hydrogen effusion and its temperature dependence in semiconducting amorphous a-si:H/a-SiN,:H multilayer films prepared by PECVD has been studied using IR absorption, nuclear reaction method, SIMS and TEM. Some possible interpretations are presented for out-diffusion of hydrogen in the films.

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References

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