Gu Cong, Wang Dening, Wang Weiyuan. THE PARAMETER ANALYSIS OF i-GaAlAs/GaAs HIGFETs BY USING FINITE-ELEMENT METHOD[J]. Journal of Electronics & Information Technology, 1992, 14(5): 550-554.
Citation:
Gu Cong, Wang Dening, Wang Weiyuan. THE PARAMETER ANALYSIS OF i-GaAlAs/GaAs HIGFETs BY USING FINITE-ELEMENT METHOD[J]. Journal of Electronics & Information Technology, 1992, 14(5): 550-554.
Gu Cong, Wang Dening, Wang Weiyuan. THE PARAMETER ANALYSIS OF i-GaAlAs/GaAs HIGFETs BY USING FINITE-ELEMENT METHOD[J]. Journal of Electronics & Information Technology, 1992, 14(5): 550-554.
Citation:
Gu Cong, Wang Dening, Wang Weiyuan. THE PARAMETER ANALYSIS OF i-GaAlAs/GaAs HIGFETs BY USING FINITE-ELEMENT METHOD[J]. Journal of Electronics & Information Technology, 1992, 14(5): 550-554.
Two dimensional numerical simulation and analysis for the static state characteristics of i-GaAlAs/i-GaAs HIGFETs by using finite-element method are presented. Some improvements have been made on the boundary conditions, mesh generation and estimation of initial values in the program. The electron concentration and potential distribution etc. inside the HIGFETs are computed. The results of its output characteristics are in good agreement with the experimental data.
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