Lin Haian, Wu Chongruo, Qiu Jiezhen. THE MECHANISM FOR THE EFFECT OF OXYGEN PARTIAL PRESSURE ON THE RESPONSE OF GAS SENSORS BASED ON SnO2[J]. Journal of Electronics & Information Technology, 1993, 15(6): 659-662.
Citation:
Lin Haian, Wu Chongruo, Qiu Jiezhen. THE MECHANISM FOR THE EFFECT OF OXYGEN PARTIAL PRESSURE ON THE RESPONSE OF GAS SENSORS BASED ON SnO2[J]. Journal of Electronics & Information Technology, 1993, 15(6): 659-662.
Lin Haian, Wu Chongruo, Qiu Jiezhen. THE MECHANISM FOR THE EFFECT OF OXYGEN PARTIAL PRESSURE ON THE RESPONSE OF GAS SENSORS BASED ON SnO2[J]. Journal of Electronics & Information Technology, 1993, 15(6): 659-662.
Citation:
Lin Haian, Wu Chongruo, Qiu Jiezhen. THE MECHANISM FOR THE EFFECT OF OXYGEN PARTIAL PRESSURE ON THE RESPONSE OF GAS SENSORS BASED ON SnO2[J]. Journal of Electronics & Information Technology, 1993, 15(6): 659-662.
A new model for gas sensors based on SnO2 is developed. The surface potential height of the SnO2 grains is controlled by: (1) Oxygen adsorption (as electron acceptor) and desorption, (2) reducing gas adsorption (as electron donor) and desorption, (3) oxidation-reduction reaction in the surface phase. The effect of oxygen partial pressure on the response of gas gensors, observed by G. Coles et al., (1991) can be well explained.
G. Coles et al.. Sensors and Actuarors, B4 (1991)3-4, 485-491.[2]G. Coles et al., J. Phys. D, Appl. Phys., 24(1991)4, 633-641.[3]P. Clifford et al, Proc. Int. Meet, on Chemical Sensors, Fukuoka, Japan, (1983), 135-146.[4]吉林大学化学系,催化作用基础,科学出版社,1980年,第1-30页.[5]S. Morrison 著,赵壁英等译,表面化学物理,北京大学出版社,北京,1984年,第36页.[6]S. Morrison, Surface Science, 27(1971)3, 586-604.
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