M. Ruff, H. Mitlehner, R. Helbig, SiC Device: Physics and numerical simulation, IEEE Trans.on Electron Devices,1994,41(6),1040-1054.[2]F.B. Mclean, C. W. Tipton, J. M. McGarrity, C. J. Scozzie, Modeling the electrical characteristics of n-chamei 6H-SiC junction-field-transistors as a function of temperature. Appl. Phys.,1996,79(1),545-552.[3]C.J. Scozzie, F. B. Mclean, J. M. McGarrity, Modeling the temperature response of 4H silicon carbide junction field-effect transistors, Appl. Phys.,1997,81(11),7687-7689.[4]张玉明,SiC材料和器件的研究:[博士论文],西安,西安交通大学,1998.[5]W.J. Schaffer, G. H. Negley, K. G. Irvine, J. W. Palmour, Conductivity anisotropy in epitaxial 6H and 4H SiC, Mat. Res. Soc. Symp. Proc., Boston, MA, USA, 1994,339,595-600.[6]张玉明,张义门,罗晋生,6H-SiC JFET高温解析模型,电子学报,1998,26(8),117-119.[7]T. Ytterdal, B. J. Moon, T. A. Fjeldly, M. S. Shut, Enhanced GaAs MESFET CAD model for a wide range of temperature, IEEE Trans. Ori Electron Devices, 1995,42(10),1724-1734.[8]F.B. Mclean, C. W. Tipton, J. M. Garrity, Electrical characterization of n-channel 6H-SiC JFETS as a function of temperature. Inst. Phys. Conf. Ser. 137, Washington, DC,USA,1993,507-510.[9]K.Dohnke,R. Rupp,D.Peters, J.Volkl, D.Stephani, 6H-SiC Junction field effect transistor for high-temperature applications. Inst. Phys. Conf.Ser.137, Washington, DC,USA,1993,625-627.
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