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Volume 23 Issue 2
Feb.  2001
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Shang Yechun, Zhang Yimen, Zhang Yuming . HIGH TEMPERATURE CHARACTERISTICS OF 6H-SiC JFET[J]. Journal of Electronics & Information Technology, 2001, 23(2): 203-207.
Citation: Shang Yechun, Zhang Yimen, Zhang Yuming . HIGH TEMPERATURE CHARACTERISTICS OF 6H-SiC JFET[J]. Journal of Electronics & Information Technology, 2001, 23(2): 203-207.

HIGH TEMPERATURE CHARACTERISTICS OF 6H-SiC JFET

  • Received Date: 1999-01-12
  • Rev Recd Date: 2000-01-07
  • Publish Date: 2001-02-19
  • The gate leakage current of 6H-SiC JFET in high temperature has been analyzed and simulated, The result shows that the effect of the gate leakage current on JFET will become more and more notable when the temperature is higher than 700K. Based on the analysis, a model of 6H-SiC JFET for high temperature is proposed, in which the two-level donor ionization model and Caughey-Thomas equation are included. The simulated results are in good agreement with measured data in a wide range of temperature from 300K to 773K.
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  • M. Ruff, H. Mitlehner, R. Helbig, SiC Device: Physics and numerical simulation, IEEE Trans.on Electron Devices,1994,41(6),1040-1054.[2]F.B. Mclean, C. W. Tipton, J. M. McGarrity, C. J. Scozzie, Modeling the electrical characteristics of n-chamei 6H-SiC junction-field-transistors as a function of temperature. Appl. Phys.,1996,79(1),545-552.[3]C.J. Scozzie, F. B. Mclean, J. M. McGarrity, Modeling the temperature response of 4H silicon carbide junction field-effect transistors, Appl. Phys.,1997,81(11),7687-7689.[4]张玉明,SiC材料和器件的研究:[博士论文],西安,西安交通大学,1998.[5]W.J. Schaffer, G. H. Negley, K. G. Irvine, J. W. Palmour, Conductivity anisotropy in epitaxial 6H and 4H SiC, Mat. Res. Soc. Symp. Proc., Boston, MA, USA, 1994,339,595-600.[6]张玉明,张义门,罗晋生,6H-SiC JFET高温解析模型,电子学报,1998,26(8),117-119.[7]T. Ytterdal, B. J. Moon, T. A. Fjeldly, M. S. Shut, Enhanced GaAs MESFET CAD model for a wide range of temperature, IEEE Trans. Ori Electron Devices, 1995,42(10),1724-1734.[8]F.B. Mclean, C. W. Tipton, J. M. Garrity, Electrical characterization of n-channel 6H-SiC JFETS as a function of temperature. Inst. Phys. Conf. Ser. 137, Washington, DC,USA,1993,507-510.[9]K.Dohnke,R. Rupp,D.Peters, J.Volkl, D.Stephani, 6H-SiC Junction field effect transistor for high-temperature applications. Inst. Phys. Conf.Ser.137, Washington, DC,USA,1993,625-627.
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