A LOW-NOISE 1.2-1.8 GHz COOLED GaAs FET AMPLIFIER

Cao Yiting

Volume 9 Issue 1

Jan. 1987

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Cao Yiting. A LOW-NOISE 1.2-1.8 GHz COOLED GaAs FET AMPLIFIER[J]. Journal of Electronics & Information Technology, 1987, 9(1): 90-95.

Citation:

Cao Yiting. A LOW-NOISE 1.2-1.8 GHz COOLED GaAs FET AMPLIFIER[J]. Journal of Electronics & Information Technology, 1987, 9(1): 90-95.

Cao Yiting. A LOW-NOISE 1.2-1.8 GHz COOLED GaAs FET AMPLIFIER[J]. Journal of Electronics & Information Technology, 1987, 9(1): 90-95.

Citation:

Cao Yiting. A LOW-NOISE 1.2-1.8 GHz COOLED GaAs FET AMPLIFIER[J]. Journal of Electronics & Information Technology, 1987, 9(1): 90-95.

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A LOW-NOISE 1.2-1.8 GHz COOLED GaAs FET AMPLIFIER

Cao Yiting

Received Date: 1985-05-31
Rev Recd Date: 1985-11-05
Publish Date: 1987-01-19

Abstract

Abstract

A low-noise 1.2-1.8 GHz cooled GaAs FET amplifier with mixer bias circuit is reported. The amplifier noise temperature obtained at 20 K ambient in the frequency range of 1.2-1.7 GHz is 10 K. The lowest noise temperature is 4 K. The gain is about 30 dB. An automatic measuring instrument for noise temperature was designed. The noise effect of the input cable and the error analysis of total measuring were made. The total measurement error is 2 K.

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References(1)

References

S. Weinreb, Electronics Division Internal Report No. 220, NRAO, Sept. 1981.[2]D. R. Williams, W. Lum and S, Weinreb, Micrvmavc J., 23(1980), 73.[3]S. Weinreb, IEEE Trans. on MTT, MTT-28(1980), 1041.[4]C. A. Liechti and R. A. Larrick, ibid.,MTT-24(1976), 376.[5]P. Wolf, IBM J. Res. Develop., 14(1970), 125.[6]M. Schneider, Bell Sys. Tech. J., 48(1969), 1421.[7]T. Suzuki, A. Nara, M. Nakatoni and T. Ishii, IEEE Trans. on MTT, MTT-17(1979), 1070.[8]H. Fukui, ibid., MTT-27(1979), 643.

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