Ding Koubao, Zhang Xiumiao, Shi Guohua, Sun Qinsheng, Shi Jianqing. STUDY OF THE DEEP LEVELS IN ELECTRON IRRADIATED CZ-S1 SLIGHTLY DOPED WITH NITROGEN[J]. Journal of Electronics & Information Technology, 1995, 17(3): 334-336.
Citation:
Ding Koubao, Zhang Xiumiao, Shi Guohua, Sun Qinsheng, Shi Jianqing. STUDY OF THE DEEP LEVELS IN ELECTRON IRRADIATED CZ-S1 SLIGHTLY DOPED WITH NITROGEN[J]. Journal of Electronics & Information Technology, 1995, 17(3): 334-336.
Ding Koubao, Zhang Xiumiao, Shi Guohua, Sun Qinsheng, Shi Jianqing. STUDY OF THE DEEP LEVELS IN ELECTRON IRRADIATED CZ-S1 SLIGHTLY DOPED WITH NITROGEN[J]. Journal of Electronics & Information Technology, 1995, 17(3): 334-336.
Citation:
Ding Koubao, Zhang Xiumiao, Shi Guohua, Sun Qinsheng, Shi Jianqing. STUDY OF THE DEEP LEVELS IN ELECTRON IRRADIATED CZ-S1 SLIGHTLY DOPED WITH NITROGEN[J]. Journal of Electronics & Information Technology, 1995, 17(3): 334-336.
The deep levels in electron irradiated CZ silicon single crystal grown in pure nitrogen protective atmosphere has been studied. It is pointed out that there is no measurable deep level related to nitrogen.
Evwarage A O, Baliga B J. J. Electrochem. Soc., 1977, 124(6): 913-916.[2]Brotherton S D, Bradley P. J. Appl. Phys., 1982, 53(8): 5720-5731.[3]阙端麟,李立本,林玉瓶.中国专利,CN8500295, 1985.[4]Lang D V. J. Appl. Phys., 1974, 45(7): 3014-3022.[5]Watkins G D, Corbett J W, Walker R M. J. Appl. Phys., 1959, 30(8): 1198-1203.
DownLoad: