Study of the electric characteristics and radiation response of 6h-sic mos structure

Shang Yechun; Zhang Yirnen; Zhang Yuming; Liu Zhongli

Volume 25 Issue 3

Mar. 2003

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Article Navigation > Journal of Electronics & Information Technology > 2003 > 25(3): 389-394

Shang Yechun, Zhang Yirnen, Zhang Yuming, Liu Zhongli. Study of the electric characteristics and radiation response of 6h-sic mos structure[J]. Journal of Electronics & Information Technology, 2003, 25(3): 389-394.

Citation:

Shang Yechun, Zhang Yirnen, Zhang Yuming, Liu Zhongli. Study of the electric characteristics and radiation response of 6h-sic mos structure[J]. Journal of Electronics & Information Technology, 2003, 25(3): 389-394.

Citation:

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Study of the electric characteristics and radiation response of 6h-sic mos structure

Received Date: 2001-09-03
Rev Recd Date: 2002-03-08
Publish Date: 2003-03-19

Abstract

Abstract

The radiation response and electric characteristics of 6H-SiC MOS structure are studied with experiment. It is found that the main electronic conduction mechanism in the high field regions of the I-V characteristics is identified to be Fowler-Nordheim tunneling. The fact that ionization radiation effect becomes more notable at high oxide electric field indicates that the generation of radiation induced charge-centers near SiC/SiO2 interface and in gate oxide under high electric field is higher than that under low electric field. SiC MOS structure has a more significant tolerance to y rays than Si MOS structure. Flatband voltage shift of SiC MOS capacitor is less than 2V under radiation of 58kGy(Si).

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References(1)

References

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