EXPERIMENTS OF ACTIVATION TO NEA WITH A BULK p+ GaAs

Wang Naizhu; Wang Ning; Gu Xiangchun

Volume 13 Issue 2

Mar. 1991

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Article Navigation > Journal of Electronics & Information Technology > 1991 > 13(2): 177-182

Wang Naizhu, Wang Ning, Gu Xiangchun. EXPERIMENTS OF ACTIVATION TO NEA WITH A BULK p+ GaAs[J]. Journal of Electronics & Information Technology, 1991, 13(2): 177-182.

Citation:

Wang Naizhu, Wang Ning, Gu Xiangchun. EXPERIMENTS OF ACTIVATION TO NEA WITH A BULK p+ GaAs[J]. Journal of Electronics & Information Technology, 1991, 13(2): 177-182.

Wang Naizhu, Wang Ning, Gu Xiangchun. EXPERIMENTS OF ACTIVATION TO NEA WITH A BULK p+ GaAs[J]. Journal of Electronics & Information Technology, 1991, 13(2): 177-182.

Citation:

Wang Naizhu, Wang Ning, Gu Xiangchun. EXPERIMENTS OF ACTIVATION TO NEA WITH A BULK p+ GaAs[J]. Journal of Electronics & Information Technology, 1991, 13(2): 177-182.

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EXPERIMENTS OF ACTIVATION TO NEA WITH A BULK p+ GaAs

Received Date: 1989-10-10
Rev Recd Date: 1990-07-11
Publish Date: 1991-03-19

Abstract

Abstract

The activation experiments have been conducted with bulk p+ GaAs single crystal samples without any additional epitaxy or cleavage in vacuum. AES analysis is used to assist the establishment of surface cleaning processing. The easy determination of fusion point of pure Al nearby the sample helped us out the surface temperature control problem. The samples treated at relatively low background vacuum (2-610-7Pa) have a white light photoemission as high as 1000A/lm.

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References(1)

References

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