FDTD Modeling of Active Devices Characterized by Measured S-Parameters

Chen  Zhi-Hui; Chu  Qing-Xin

doi:10.3724/SP.J.1146.2007.00710

Volume 30 Issue 11

Jan. 2011

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Article Navigation > Journal of Electronics & Information Technology > 2008 > 30(11): 2767-2770

Chen Zhi-Hui, Chu Qing-Xin. FDTD Modeling of Active Devices Characterized by Measured S-Parameters[J]. Journal of Electronics & Information Technology, 2008, 30(11): 2767-2770. doi: 10.3724/SP.J.1146.2007.00710

Citation:

Chen Zhi-Hui, Chu Qing-Xin. FDTD Modeling of Active Devices Characterized by Measured S-Parameters[J]. Journal of Electronics & Information Technology, 2008, 30(11): 2767-2770. doi: 10.3724/SP.J.1146.2007.00710

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FDTD Modeling of Active Devices Characterized by Measured S-Parameters

doi: 10.3724/SP.J.1146.2007.00710

Chen Zhi-Hui^{① 褚庆昕
,},
Chu Qing-Xin

Received Date: 2007-05-14
Rev Recd Date: 2007-09-24
Publish Date: 2008-11-19

Abstract

Abstract

A novel FDTD modeling approach for active devices characterized by measured S-parameters is presented. This approach applies Vector Fitting (VF) technique and Piecewise Linear Recursive Convolution (PLRC) technique to complete modeling process, and does not need to know the equivalent circuits of active devices. It preserves the explicit nature of the conventional FDTD method, and obtains a general updated formula. Furthermore, the main data-processing procedure is directly handled over the frequency band of interest, which avoids the time-domain non-causal error in traditional techniques. It is useful to full-wave analyze hybrid microwave circuits including practical active devices.
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References

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