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Volume 30 Issue 8
Jan.  2011
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Nan Jing-chang, Liu Yuan-an, Li Xin-chun, Gao Jin-chun. Analysis and Modeling on Expanding Volterra-Series Behavior Model for Nonlinear Power Amplifier with Memory Effects[J]. Journal of Electronics & Information Technology, 2008, 30(8): 2021-2024. doi: 10.3724/SP.J.1146.2007.00121
Citation: Nan Jing-chang, Liu Yuan-an, Li Xin-chun, Gao Jin-chun. Analysis and Modeling on Expanding Volterra-Series Behavior Model for Nonlinear Power Amplifier with Memory Effects[J]. Journal of Electronics & Information Technology, 2008, 30(8): 2021-2024. doi: 10.3724/SP.J.1146.2007.00121

Analysis and Modeling on Expanding Volterra-Series Behavior Model for Nonlinear Power Amplifier with Memory Effects

doi: 10.3724/SP.J.1146.2007.00121
  • Received Date: 2007-01-19
  • Rev Recd Date: 2008-01-30
  • Publish Date: 2008-08-19
  • Volterra-series behavioral model for Radio Frequency (RF) power amplifier is limited to weak nonlinearity because of high computational complexity. In order to reduce computational complexity or the number of coefficient of Volterra-series kernels, the two approaches, based on Chebyshev orthogonal polynomials function and Laguerre orthogonal polynomials function, are proposed, and the mathematical expressions of Volterra-Chebyshev and Volterra-Laguerre behavioral model is derived, and Volterra-laguerre model is simulated. Mathematical analysis and simulation results show that Volterra-Chebyshev and Volterra-Laguerre behavioral model have a simplified structure and reductive coefficients than general Volterra-series model.
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  • Hyunchul Ku and Kenney J S. Behavioral modeling ofnonlinear RF power amplifiers considering memory effects[J].IEEE Trans. on Microwave Theory and Techniques.2003,51(12):2495-2503[2]Silveira D, Gadringer M, and Arthaberl H. RF-poweramplifier characteristics determination using parallel cascadeWiener models and pseudo-inverse techniques [A].Asia-Pacific Microwave Conference [C]. Suzhou (China).APMC2005 Proceeding, 2005, Vol 2: 1-4.[3]Isaksson M, Wisell D, and Ronnow D. A comparativeanalysis of behavioral models for RF power amplifiers[J].IEEE Trans. on Microwave Theory and Techniques.2006,54(1):348-359[4]Zhu Anding, Wren M, and Brazil T J. An efficientVolterra-based behavioral model for wideband RF poweramplifiers[C]. Microwave symposium digest, 2003IEEEMTT-S, 2003, Vol 2: 787-790.[5]Zhu Anding and Brazil T J. Behavioral modeling of RF poweramplifiers based on pruned volterra series[J].IEEEMicrowave and Wireless Components Letters.2004, 14(12):563-565[6]Singerl P and Kubin G. Chebyshev approximation ofbaseband Volterra series for wideband RF poweramplifiers[C]. IEEE International Symposium on Circuit andSystem, ISCAS 2005, Japan, 2005, Vol.3: 2655-2658.[7]Zhu Anding and Brazil T J. RF power amplifier behavioralmodeling using Volterra expansion with Laguerrefunctions[C]. Microwave symposium digest, 2005IEEEMTT-S International, 2005, 4: 963-966.[8]Murali, Tbmmla M T. Donovan Bruce E, and Watkans R N.Volterra series based modeling and compensation ofnonlinearities in high power amplifiers[C]. 1997 ICASSP,Munich, GERMANY, 1997, Vol 3: 2417-2420.[9]Isaksson M, Wisell D, and Ronnow D. A comparativeanalysis of behavioral models for RF power amplifiers[J].IEEE Trans. on Microwave Theory and Techniques.2006,54(1):348-359[10]Freescale simeconductor, Inc. freescale device data-wirelessRF product. 2005, 1: p495-499.
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