The Emission Model of Secondary Electron in Multistage Depressed Collector CAD

赵玉清. 电子束离子束技术. 西安: 西安交通大学出版社,2002: 180-183.[2]傅慈海, 杨英杰. 物理电子技术原理. 广州: 华南理工大学出版社, 1991, 第3-第4 章.[3]贺庆, 寇建勇, 孙瑜等. 多级降压收集极中次级电子的研究.真空电子技术, 2004, 1: 25-27.He Q, Kou J Y, and Sun Y, et al.. Study on secondary electronin multistage depressed collector, Vacuum Electronics, 2004, 1:25-27.[4]Vaughan J R M. A new formula for secondary emission yield[J].IEEE Trans. on ED.1989, 36(9):1963-1967[5]Vaughan J R M. Secondary emission formulas. IEEE Trans.on ED, 1993, 40(4): 830.[6]Petillo J, Eppley K, and Panagos D, et al.. The MICHELLEthree-dimensional electron gun and collector modeling tool:theory and design. IEEE Trans. on PS, 2002, 30(3):1238-1264.[7]Valfells A, Singh A, and Kolander M J, et al.. Advancementsin codes for computer aided design of depressed collectors andtracing of backscattered electrons-part 2: improvements inmodeling of the physics of secondary electron emission andbackscattering. IEEE Trans. on PS, 2002, 30(3): 1271-1275.[8]Reimer L. Scanning electron microscopy, physics of imageformation and microanalysis. New York: Springer-Verlag,1985: 135-169.[9]Werner U, Bethge H, and Heydenreich J. An analytic modelof electron backscattering for the energy range of 10-100keV[J].Ultramicroscopy.1982, 8(1):417-428[10]黄桃, 杨中海, 胡权等. TWTCAD多级降压收集极CAD设计与实现. 中国电子学会真空电子学分会第15 届学术年会, 昆明, 2005: 320-323.