A New Charge Pump with High Voltage Gain for Low Supply Environment

Yang Sheng-guang; He Shu-zhuan; Gao Ming-lun; Li Wei; Zhou Song-ming

doi:10.3724/SP.J.1146.2005.01521

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Yang Sheng-guang, He Shu-zhuan, Gao Ming-lun, Li Wei, Zhou Song-ming. A New Charge Pump with High Voltage Gain for Low Supply Environment[J]. Journal of Electronics & Information Technology, 2007, 29(8): 2001-2005. doi: 10.3724/SP.J.1146.2005.01521

Citation:

Yang Sheng-guang, He Shu-zhuan, Gao Ming-lun, Li Wei, Zhou Song-ming. A New Charge Pump with High Voltage Gain for Low Supply Environment[J]. Journal of Electronics & Information Technology, 2007, 29(8): 2001-2005. doi: 10.3724/SP.J.1146.2005.01521

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A New Charge Pump with High Voltage Gain for Low Supply Environment

doi: 10.3724/SP.J.1146.2005.01521

Received Date: 2005-11-25
Rev Recd Date: 2006-05-08
Publish Date: 2007-08-19

Abstract

Abstract

Charge pump plays an important role in low supply voltage integrated circuits. Three important issues of on-chip charge pump circuits are voltage gain, output voltage ripple and area efficiency. A new charge pump is proposed in this paper which introduces a subsidiary charge pump and two voltage level shifters. The new structure can generate different magnitude clocks to drive the gates of switch transistors, which will improve voltage gain of charge pump greatly by means of effective control of conduction of them. At the other hand, we can avoid the threshold voltage loss by taking PMOS transistors as switch transistors. Simulation results show: The new charge pumps have higher voltage gain, shorter start up time and small voltage ripple compared with those proposed in earlier papers, especially in low supply voltage environment.

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References

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