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Volume 29 Issue 5
Jan.  2011
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Article Contents
Zheng Wei, Wang Xiang-zhan, Ren Jun, Yang Fan, You Huan-cheng, Li Jing-chun, Yang Mo-hua . Wide-Band Physical Model for Spiral Inductors on Silicon Substrate[J]. Journal of Electronics & Information Technology, 2007, 29(5): 1254-1257. doi: 10.3724/SP.J.1146.2005.01396
Citation: Zheng Wei, Wang Xiang-zhan, Ren Jun, Yang Fan, You Huan-cheng, Li Jing-chun, Yang Mo-hua . Wide-Band Physical Model for Spiral Inductors on Silicon Substrate[J]. Journal of Electronics & Information Technology, 2007, 29(5): 1254-1257. doi: 10.3724/SP.J.1146.2005.01396

Wide-Band Physical Model for Spiral Inductors on Silicon Substrate

doi: 10.3724/SP.J.1146.2005.01396
  • Received Date: 2005-11-01
  • Rev Recd Date: 2006-04-24
  • Publish Date: 2007-05-19
  • For monolithic RF spiral inductor on high-loss silicon substrate, a novel physical model is proposed, in which functions of skin effect, proximity effect and eddy current loss in the substrate to frequency-dependent series parameters Ls and Rs are accounted in the light of modified partial equivalent element circuit methodology and Maxwells electromagnetic theory, and in the meanwhile, the distributed characteristics of parasitic capacitances are captured by n equivalent-circuit. Up to 20GHz, the model reveals quite good accuracy within 7% with data from full-wave electromagnetic filed simulator, including equivalent inductor Leff , resistor Reff and quality factor Q and, hopefully, it can be applied to further theory research and optimum design of RFIC spiral inductor on Si.
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  • Burghartz J N and Rejaei B. On the design of RF spiral inductors on silicon[J].IEEE Trans. on Electron Devices.2003, 50(3):718-729[2]Yue C P and Wong S S. Physical modeling of spiral inductors on silicon[J].IEEE Trans. on Electron Devices.2000, 47(3):560-568[3]李富华, 赵吉祥, 李征帆. 基于PEEC方法的片内螺旋电感建模. 半导体学报, 2005, 26(4): 770-774. Li Fu-hua, Zhao Ji-xiang, and Li Zheng-fan. Modeling for spiral inductors on-chip with partial element equivalent circuit method. Chinese Journal of Semiconductors, 2005, 26(4): 770-774.[4]Greenhouse H M. Design of planar rectangular microelectronic inductors. IEEE Trans. on Parts, Hybrids, Packaging, 1974, PHP-10 (2): 101-109.[5]Cao Yu and Groves R A, et al.. Frequency-independent equivalent-circuit model for on-chip spiral inductors[J].IEEE J. Solid-State Circuits.2003, 38(3):419-426[6]Tong K T and Tsui C. A physical analytical model of multilayer on-chip inductors[J].IEEE Trans. on Microwave Theory Tech.2005, 53(4):1143-1149[7]Arcioni P and Castello R, et al.. An innovative modelization of loss mechanism in silicon integrated inductors[J].IEEE Trans. on Circuits and Systems .1999, 46(12):1453-1460
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