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Volume 29 Issue 1
Jan.  2011
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Gu Ming, Yang Jun. Optimization of SRAM Memory Cell Based on Physical Alpha-Power Law MOSEFT Model[J]. Journal of Electronics & Information Technology, 2007, 29(1): 223-226. doi: 10.3724/SP.J.1146.2005.01313
Citation: Gu Ming, Yang Jun. Optimization of SRAM Memory Cell Based on Physical Alpha-Power Law MOSEFT Model[J]. Journal of Electronics & Information Technology, 2007, 29(1): 223-226. doi: 10.3724/SP.J.1146.2005.01313

Optimization of SRAM Memory Cell Based on Physical Alpha-Power Law MOSEFT Model

doi: 10.3724/SP.J.1146.2005.01313
  • Received Date: 2005-10-18
  • Rev Recd Date: 2006-04-06
  • Publish Date: 2007-01-19
  • Memory Cell is a basic and important macro block of SRAM. It has played a positive role in improving performance and reliability, lowering cost and power consumption. In this paper a new physical alpha-power law MOSEFT model is used to establish power and delay model related with SRAM memory cell. Adopting those performance models, memory cell area model and reliability analysis, a new memory cell structure optimization method is proposed. Experimental result shows SRAM power, access time and area are reduced by adopting this method, and computed performance parameter varies less than 10% compares with simulation result. Experiment results indicate the effectiveness and validity of the performance model and optimization method.
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  • [1] Burns J R. Switching response of complementary symmetry MOS transistor logic circuits[J]. RCA Rev, 1964, 25(12): 627 -661. [2] Hedenstierna N and Jeppson K O. CMOS circuit speed and buffer optimization[J]. IEEE Trans. on CAD, 1987, 6(2): 270 -281. [3] Vemuru S R. A model for delay evaluation of a CMOS inverter[C]. Proceeding of the ISCAS, New Orleans, USA, 1990: 89-92. [4] Sakurai T and Newton A R. Alpha-Power law MOSEFT model and its applications to CMOS inverter delay and other formulas[J].Solid State Circuits.1990, 25(2):584- [5] Bowman K A and Austin B L, et al.. A physical Alpha-power law MOSEFT model[J].Solid State Circuits.1999, 34(10):1410- [6] Sakurai T. Closed form expressions for interconnection delay, coupling and crosstalk in VLSIs [J].IEEE Trans. on Electron Devices.1993, 40(1):118- [7] Rabaey J M, et al. Digital integrated circuits: A design perspective[M]. New Jersey: Prentice-Hall, 2003: 657-661. [8] Bhavnagarwala A J. The impact of intrinsic device fluctuations on CMOS SRAM cell stability[J].Solid State Circuits.2001, 36(4):658-
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