A Novel TDMOSFET and Its Neural Network Modeling for Ternary Logic Applications

LU Bin; LU Haoran; ZHAO Xiaohong; DI Jiayu; XING Linlin

doi:10.11999/JEIT260413

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LU Bin, LU Haoran, ZHAO Xiaohong, DI Jiayu, XING Linlin. A Novel TDMOSFET and Its Neural Network Modeling for Ternary Logic Applications[J]. Journal of Electronics & Information Technology. doi: 10.11999/JEIT260413

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LU Bin, LU Haoran, ZHAO Xiaohong, DI Jiayu, XING Linlin. A Novel TDMOSFET and Its Neural Network Modeling for Ternary Logic Applications[J]. Journal of Electronics & Information Technology. doi: 10.11999/JEIT260413

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A Novel TDMOSFET and Its Neural Network Modeling for Ternary Logic Applications

doi: 10.11999/JEIT260413 cstr: 32379.14.JEIT260413

LU Bin^1
,,
LU Haoran^2
,,
ZHAO Xiaohong^{3
,
,},
DI Jiayu^1
,,
XING Linlin^2
,

1.
School of Computer Science and Artificial Intelligence, Shanxi Normal University, Taiyuan 030031, China
2.
School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China
3.
School of Aeronautical Engineering, Air Force Engineering University, Xi’an 710071, China

Funds: The Project of Natural Science Research of Shanxi Province (202403021211225), The Postgraduate Education Innovation Program of Shanxi Province (2025XS353)

Received Date: 2026-04-08
Accepted Date: 2026-08-10
Rev Recd Date: 2026-08-10

Available Online: 2026-08-13

Abstract

Abstract

Objective Complementary Metal-Oxide-Semiconductor (CMOS) technology continues to advance toward smaller device dimensions and higher integration. As circuit integration increases, short-channel effects and other phenomena increase leakage current in MOSFET devices, resulting in higher static power consumption. With the rapid development of artificial intelligence, traditional binary logic faces limitations in processing and storing massive amounts of data. Ternary logic has therefore attracted increasing attention because it provides higher information density and lower system complexity than binary logic. However, current ternary logic circuits still face challenges, including the use of multiple components, passive elements, and poor compatibility with conventional CMOS processes. Methods A novel Tunneling-Drift-Diffusion Metal-Oxide-Semiconductor Field-Effect Transistor (TDMOSFET) that combines quantum tunneling and drift-diffusion mechanisms is proposed. The device exhibits a constant off-state current characteristic, making it suitable for ternary logic applications. Its operating principle is analyzed, and an Artificial Neural Network (ANN) is used to model its electrical characteristics. The ANN model is trained using Technology Computer-Aided Design (TCAD) simulation data to predict the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The trained ANN model is further converted into a Verilog-A model and integrated into HSPICE to simulate basic ternary logic circuits, including the Standard Ternary Inverter (STI), Negative Ternary Inverter (NTI), Positive Ternary Inverter (PTI), Ternary NOT-AND gate (T-NAND), and Ternary NOT-OR gate (T-NOR). Results and Discussions The trained ANN model accurately predicts the I-V and C-V characteristics of the TDMOSFET. Compared with the TCAD results, the maximum relative errors for the drain current (I_DS), gate-drain capacitance (C_GD), and gate-source capacitance (C_GS) are 39.43%, 5.05%, and 14.19%, respectively, whereas the corresponding average relative errors are 0.46%, 0.69%, and 0.51%. The ANN model is successfully converted into a Verilog-A model and integrated into HSPICE for circuit-level simulation. The STI, NTI, PTI, T-NAND, and T-NOR circuits are successfully simulated. The TDMOSFET-based ternary logic circuits do not require passive elements and are compatible with conventional CMOS processes. Conclusions A novel TDMOSFET with dual conduction mechanisms is proposed. When the gate-source voltage is below the turning voltage (V_turn), band-to-band tunneling is the dominant conduction mechanism, and the device operates similarly to a reverse-biased tunneling diode. When the gate-source voltage exceeds V_turn, the drift-diffusion mechanism becomes dominant, and the device exhibits characteristics similar to those of a conventional MOSFET. The proposed device maintains compatibility with conventional CMOS processes, simplifying the manufacturing process and reducing cost and integration complexity. TDMOSFET-based ternary logic circuits realize ternary operation without increasing the number of transistors, using passive elements, or requiring multivalued supply voltages. The proposed TCAD simulation → ANN modeling → Verilog-A modeling → HSPICE simulation framework can also be applied to the study of other emerging semiconductor devices.

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References(32)

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