Research Status and Prospects of Mid-Wavelength Infrared Superlattice Detector Technology

LIU Ming; ZHAO Yaqi; GUAN Xiaoning; ZHANG Fan; LU Pengfei

doi:10.11999/JEIT260083

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LIU Ming, ZHAO Yaqi, GUAN Xiaoning, ZHANG Fan, LU Pengfei. Research Status and Prospects of Mid-Wavelength Infrared Superlattice Detector Technology[J]. Journal of Electronics & Information Technology. doi: 10.11999/JEIT260083

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LIU Ming, ZHAO Yaqi, GUAN Xiaoning, ZHANG Fan, LU Pengfei. Research Status and Prospects of Mid-Wavelength Infrared Superlattice Detector Technology[J]. Journal of Electronics & Information Technology. doi: 10.11999/JEIT260083

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Research Status and Prospects of Mid-Wavelength Infrared Superlattice Detector Technology

doi: 10.11999/JEIT260083 cstr: 32379.14.JEIT260083

LIU Ming^{1, 2},
ZHAO Yaqi¹,
GUAN Xiaoning¹,
ZHANG Fan^{1, 3},
LU Pengfei^{1
,
,}

1.
School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, China
2.
The 11th Research Institute of China Electronics Technology Group Corporation, Beijing 100015, China
3.
Ningbo Weiyuan Optoelectronic Research Institute Co., Ltd., Ningbo 315200, China

Funds: The National Key Laboratory of Infrared Detection Technologies (IRDT-25-01)

Received Date: 2026-01-22
Accepted Date: 2026-04-09
Rev Recd Date: 2026-03-30

Available Online: 2026-05-03

Abstract

Abstract

Significance Mid-Wavelength Infrared (MWIR) detectors are widely used in civilian and military applications because of their high sensitivity and excellent temperature discrimination. Type-II SuperLattice (T2SL) materials, especially the InAs/GaSb and InAs/InAsSb systems, have become promising candidates for third-generation infrared photodetectors. This review systematically analyzes the research status and future trends of MWIR T2SL detector technology. It focuses on key photoelectric parameters, including Quantum Efficiency (QE), dark current density, and Specific Detectivity (D*). This work provides a reference for material selection and performance optimization in this rapidly developing field. Progress Considerable progress has been made in dark current suppression and photoresponse enhancement for MWIR T2SL detectors. For dark current suppression, advanced barrier structures, such as nBn, XBn, and M-structures, are designed through band-structure engineering. These structures effectively block majority-carrier transport while allowing efficient collection of photogenerated carriers. For instance, an nBn device with an AlAsSb/InAsSb superlattice barrier shows a dark current density of 2.01×10^–5 A/cm² at 150 K (Fig. 1(a,b)). Strain compensation and optimized epitaxial growth further reduce bulk dark current. One device achieves a dark current density of 4.5×10^–7 A/cm² at 140 K (Fig. 2(c,d)). Device process optimization, including two-step etching and Zn-diffusion-based planar junction formation, also reduces surface leakage current (Fig. 3). For photoresponse enhancement, the main strategies include micro/nano-optical structure integration, epitaxial growth optimization, and device process improvement. Monolithically integrated metalenses increase the peak responsivity to 9.01 A/W at 300 K (Fig. 4(a)). Guided-mode resonance architectures enable a room-temperature External Quantum Efficiency (EQE) of approximately 60% (Fig. 4(b,c)). Epitaxial optimization, including stepped absorption layers and interfacial graded doping, increases the QE to 59.4% at 150 K (Fig. 5(c,d)). Device process optimization, such as substrate removal and Anti-Reflection (AR) coating deposition, also improves QE. An average QE of 63.7% is reported in the 3.7–4.8 μm range (Fig. 6(c,d)). Comparative analysis shows that InAs/GaSb detectors are mainly reported at 77–150 K, whereas InAs/InAsSb detectors show stronger potential for higher-temperature operation, especially near 150 K (Fig. 7, Fig. 8). Overall, dark current densities are generally suppressed below 10^–4 A/cm², and peak QEs approach 70%. Conclusions T2SL materials, with tunable band structures and low Auger recombination rates, have become a core material platform for high-performance MWIR detection. Current studies have addressed key challenges in dark current suppression and photoresponse enhancement. Through advanced barrier design and device process optimization, dark current densities have been suppressed to the 10^–6 A/cm² level at approximately 150 K. Through optical and epitaxial engineering, QEs have been increased to approximately 60% or higher. The InAs/InAsSb material system is particularly promising for High-Operating-Temperature (HOT) applications. Prospects Future development will focus on four main directions. First, the HOT limit should be further increased, with the goal of maintaining diffusion-limited performance at 180 K or higher. Second, large-format Focal Plane Arrays (FPAs) should be developed based on highly uniform material growth through mature Molecular Beam Epitaxy (MBE), aiming for pixel operability higher than 99%. Third, multicolor and multispectral detection should be expanded by precisely tuning superlattice periods, enabling integrated dual-band or multiband MWIR detection with reduced crosstalk. Fourth, new device architectures and coupled physical mechanisms should be explored to extend detector performance and application boundaries.
- Type-II SuperLattice (T2SL),
- Mid-Wavelength Infrared (MWIR),
- InAs/GaSb,
- InAs/InAsSb

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References(47)

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