Citation: | GAO Sheng, ZHANG Xianfeng, CHEN Qiurui, CHEN Weizhong, ZHANG Hongsheng. Low Switching Loss Double Trench SiC MOSFET with Integrated JFET Continuity Diode[J]. Journal of Electronics & Information Technology. doi: 10.11999/JEIT250237 |
[1] |
JIANG Huaping, WEI Jin, DAI Xiaoping, et al. SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications[C]. Proceedings of 2017 29th International Symposium on Power Semiconductor Devices and IC’s (ISPSD), Sapporo, Japan, 2017: 49–52. doi: 10.23919/ISPSD.2017.7988890.
|
[2] |
SUNG W and BALIGA B J. On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET)[J]. IEEE Transactions on Industrial Electronics, 2017, 64(10): 8206–8212. doi: 10.1109/TIE.2017.2696515.
|
[3] |
LI Xuan, TONG Xing, HUANG A Q, et al. SiC trench MOSFET with integrated self-assembled three-level protection Schottky barrier diode[J]. IEEE Transactions on Electron Devices, 2018, 65(1): 347–351. doi: 10.1109/TED.2017.2767904.
|
[4] |
LUO Maojiu, CHEN Hang, ZHANG Yourun, et al. Novel design and modelling of SiC junction barrier Schottky diode with improved Baliga FOM under high-temperature applications[J]. Microelectronics Journal, 2024, 151: 106343. doi: 10.1016/j.mejo.2024.106343.
|
[5] |
OHOKA A, UCHIDA M, KIYOSAWA T, et al. Reduction of RonA retaining high threshold voltage in SiC DioMOS by improved channel design[C]. Proceedings of 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, 2018: 52–55. doi: 10.1109/ISPSD.2018.8393600.
|
[6] |
UCHIDA M, HORIKAWA N, TANAKA K, et al. Novel SiC power MOSFET with integrated unipolar internal inverse MOS-channel diode[C]. Proceedings of 2011 International Electron Devices Meeting, Washington, USA, 2011: 26.6. 1–26.6. 4. doi: 10.1109/IEDM.2011.6131620.
|
[7] |
OHOKA A, HORIKAWA N, KIYOSAWA T, et al. 40mΩ/1700V DioMOS (Diode in SiC MOSFET) for high power switching applications[J]. Materials Science Forum, 2014, 778/780: 911–914. doi: 10.4028/www.scientific.net/MSF.778-780.911.
|
[8] |
NA J and KIM K. A novel 4H-SiC double trench MOSFET with built-in MOS channel diode for improved switching performance[J]. Electronics, 2023, 12(1): 92. doi: 10.3390/electronics12010092.
|
[9] |
WEI Jie, JIANG Qingfeng, LUO Xiaorong, et al. High performance SiC trench-type MOSFET with an integrated MOS-channel diode[J]. Chinese Physics B, 2023, 32(2): 028503. doi: 10.1088/1674-1056/ac7cd5.
|
[10] |
WU Lijuan, YANG Guanglin, YANG Deqiang, et al. Self-clamped P-shield 4H-SiC trench MOSFET for low turn-off loss and suppress switching oscillation[J]. Microelectronics Journal, 2024, 151: 106307. doi: 10.1016/j.mejo.2024.106307.
|
[11] |
CHEN Hang, ZHANG Yourun, ZHOU Rong, et al. A novel low on-state resistance Si/4H-SiC heterojunction VDMOS with electron tunneling layer based on a discussion of the hetero-transfer mechanism[J]. Crystals, 2023, 13(5): 778. doi: 10.3390/cryst13050778.
|
[12] |
JIANG Kaizhe, ZHANG Xiaodong, TIAN Chuan, et al. A SiC asymmetric cell trench MOSFET with a split gate and integrated p+-poly Si/SiC heterojunction freewheeling diode[J]. Chinese Physics B, 2023, 32(5): 058504. doi: 10.1088/1674-1056/acbd2d.
|
[13] |
FU Hao, WEI Jiaxing, WEI Zhaoxiang, et al. Theory and design of novel power poly-Si/SiC heterojunction tunneling transistor structure[J]. IEEE Transactions on Electron Devices, 2023, 70(11): 6086–6092. doi: 10.1109/TED.2023.3317004.
|
[14] |
WANG Qingyuan, WANG Ying, FEI Xinxing, et al. Performance enhancement of 1.7 kV MOSFET using PIN-junction gate and integrated heterojunction[J]. Microelectronics Reliability, 2024, 152: 115305. doi: 10.1016/j.microrel.2023.115305.
|
[15] |
GAO Sheng, ZHANG Xianfeng, WANG Qi, et al. Asymmetric trench SiC MOSFET with integrated channel accumulation diode for enhanced reverse conduction and switching characteristics[J]. Microelectronics Journal, 2024, 153: 106436. doi: 10.1016/j.mejo.2024.106436.
|