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Volume 45 Issue 7
Jul.  2023
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DING Zhixia, HUANG Shali, LI Sai, YANG Le. Linear Superposition Analysis of HP Memristor Circuits[J]. Journal of Electronics & Information Technology, 2023, 45(7): 2659-2666. doi: 10.11999/JEIT220733
Citation: DING Zhixia, HUANG Shali, LI Sai, YANG Le. Linear Superposition Analysis of HP Memristor Circuits[J]. Journal of Electronics & Information Technology, 2023, 45(7): 2659-2666. doi: 10.11999/JEIT220733

Linear Superposition Analysis of HP Memristor Circuits

doi: 10.11999/JEIT220733
Funds:  The National Natural Science Foundation of China (62176189, 62106181)
  • Received Date: 2022-06-06
  • Accepted Date: 2022-09-06
  • Rev Recd Date: 2022-09-02
  • Available Online: 2022-09-09
  • Publish Date: 2023-07-10
  • Based on the component characteristics of Hewlett Packard(HP) memristor, the mathematical relationship formula of HP memristor is analyzed. There is an incremental linear relationship between the internal state variables of HP memristor components and the value of memristor. The change of the value of HP memristor can be superimposed under applied voltage, and the conclusion is drawn that HP memristor circuit has linear superposition. The validity and correctness of the above conclusions are verified by PSpice circuit simulation, which provides theoretical analysis support for the use of the superposition theorem in linear circuits containing HP memristors and linear components.
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