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Volume 45 Issue 2
Feb.  2023
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SUN Junwei, YANG Jianling, LIU Peng, WANG Yanfeng. Circuit Model Analysis of General Charge-controlled Memristor Based on Hyperbolic Functions[J]. Journal of Electronics & Information Technology, 2023, 45(2): 725-733. doi: 10.11999/JEIT211317
Citation: SUN Junwei, YANG Jianling, LIU Peng, WANG Yanfeng. Circuit Model Analysis of General Charge-controlled Memristor Based on Hyperbolic Functions[J]. Journal of Electronics & Information Technology, 2023, 45(2): 725-733. doi: 10.11999/JEIT211317

Circuit Model Analysis of General Charge-controlled Memristor Based on Hyperbolic Functions

doi: 10.11999/JEIT211317
Funds:  The Joint Funds of the National Natural Science Foundation of China (U1804262), The Zhongyuan Top Young Talents Program (ZYYCYU202012154), Henan Province University Science and Technology Innovation Talent Support Plan (20HASTIT027)
  • Received Date: 2021-11-23
  • Accepted Date: 2022-05-17
  • Rev Recd Date: 2022-05-05
  • Available Online: 2022-05-20
  • Publish Date: 2023-02-07
  • At present, most of the researches on the memristor simulators are flux-controlled, there are few researches on the charge-controlled memristor simulator, and the hyperbolic function simulator is seldom mentioned. Therefore, a general-purpose simulator of charge-controlled memristor based on hyperbolic function is proposed. The simulator realizes the conversion between voltage and current signals in the circuit through the voltage-current mutual conversion circuit, and calculates the generated signals through the corresponding module in the circuit, and finally obtains the universal hyperbolic charge-controlled memristor model. The simulator can realize the charge-controlled memristor corresponding to hyperbolic sine, hyperbolic cosine and hyperbolic tangent function. The equivalent circuit of the general-purpose hyperbolic function charge-controlled memristor simulator is mainly composed of operational amplifier, resistor, capacitor, triode and other basic components. By analyzing the volt-ampere characteristic curves of the simulator at different amplitudes and different frequencies, it is concluded that the simulator conforms to the basic characteristics of memory devices. The model of hyperbolic charge-controlled memristor presented in this paper has a certain reference significance for the development of memristor model.
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