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Volume 44 Issue 10
Oct.  2022
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LI Zhijun, TAN Maolin, WANG Mengjiao, MA Minglin. Associative Memory Circuit Based on Memristor with The Ebbinghaus Forgetting Rule[J]. Journal of Electronics & Information Technology, 2022, 44(10): 3657-3665. doi: 10.11999/JEIT210677
Citation: LI Zhijun, TAN Maolin, WANG Mengjiao, MA Minglin. Associative Memory Circuit Based on Memristor with The Ebbinghaus Forgetting Rule[J]. Journal of Electronics & Information Technology, 2022, 44(10): 3657-3665. doi: 10.11999/JEIT210677

Associative Memory Circuit Based on Memristor with The Ebbinghaus Forgetting Rule

doi: 10.11999/JEIT210677
Funds:  The National Key R&D Program of China (2018AAA0103300), The National Natural Science Foundation of China (62171401, 62071411)
  • Received Date: 2021-07-06
  • Rev Recd Date: 2021-09-08
  • Available Online: 2021-09-26
  • Publish Date: 2022-10-19
  • Memristor is an ideal device to realize artificial synapses due to its low power consumption, memory ability and nanometer size. In order to construct a simple, efficient and comprehensive associative memory circuit, a simple neuron circuit and a synaptic circuit based on the voltage-controlled threshold memristor is proposed. Then according to Pavlov’s associative memory model, the corresponding associative memory circuit is designed. This circuit has a simple structure and only contains three neurons and a memristive synapse, which can effectively reduce the network complexity and power consumption. what’s more, the circuit can simulate the full function of associative memory behavior. It not only realizes functions of learning, forgetting, accelerated-learning, deceleration-forgetting and deceleration-nature-forgetting, but also the learning rate and natural forgetting rate can be automatically adjusted according to the number of learning, so that the circuit is more bionic. In addition, the designed circuit agrees well with the Ebbinghaus forgetting curve, which enlarges the scope of application of the circuit.
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