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Volume 44 Issue 4
Apr.  2022
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WANG Xingqi, WANG Xiaoxia, LUO Jirun, QI Shikai, LI Yun. Investigation on Thermionic Emission Characteristics of Pressed Sc2O3 Doped Y-Gd-Hf-O Directly-heated Cathode[J]. Journal of Electronics & Information Technology, 2022, 44(4): 1382-1387. doi: 10.11999/JEIT210111
Citation: WANG Xingqi, WANG Xiaoxia, LUO Jirun, QI Shikai, LI Yun. Investigation on Thermionic Emission Characteristics of Pressed Sc2O3 Doped Y-Gd-Hf-O Directly-heated Cathode[J]. Journal of Electronics & Information Technology, 2022, 44(4): 1382-1387. doi: 10.11999/JEIT210111

Investigation on Thermionic Emission Characteristics of Pressed Sc2O3 Doped Y-Gd-Hf-O Directly-heated Cathode

doi: 10.11999/JEIT210111
Funds:  The National Natural Science Foundation of China (61771454)
  • Received Date: 2021-02-01
  • Rev Recd Date: 2021-07-01
  • Available Online: 2021-08-24
  • Publish Date: 2022-04-18
  • To improve the Y-Gd-Hf-O cathodes anti-electron bombardment ability, a scandia doped cathode is prepared by a pressing technique combined with sintering in hydrogen atmosphere. The tested result shows that the emitting current from the cathode operating at 1550 °C can remain to 87.5% of the initial one after continuous electron bombardment of 10 W for 480 h, reflecting a better anti-electron bombardment capability. The surface microstructure analysis result indicates that a cermet structure has been formed. A n-type semiconductor Y2O3-x layer has generated on the cathode surface after being sintered and activated at high temperature, which is favorable for enhancing the thermionic emission, improving the surface conductivity, and lowering the work function.
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