The Role of Parasitic Elements in Fading Memory of A Charge Controlled Memristor

Yiran SHEN; Fupeng LI; Guangyi WANG

doi:10.11999/JEIT190865

Volume 42 Issue 4

Jun. 2020

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Yiran SHEN, Fupeng LI, Guangyi WANG. The Role of Parasitic Elements in Fading Memory of A Charge Controlled Memristor[J]. Journal of Electronics & Information Technology, 2020, 42(4): 844-850. doi: 10.11999/JEIT190865

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Yiran SHEN, Fupeng LI, Guangyi WANG. The Role of Parasitic Elements in Fading Memory of A Charge Controlled Memristor[J]. Journal of Electronics & Information Technology, 2020, 42(4): 844-850. doi: 10.11999/JEIT190865

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The Role of Parasitic Elements in Fading Memory of A Charge Controlled Memristor

doi: 10.11999/JEIT190865

Institute of Modern Circuit and Intelligent Information, Hangzhou Dianzi University, Hangzhou 310018, China

Funds: The National Natural Science Foundation of China(61771176, 61801154)

Received Date: 2019-11-01
Rev Recd Date: 2019-12-26

Available Online: 2020-01-06

Publish Date: 2020-06-04

Abstract

Abstract

In the presence of parasitic elements, fading memory may occur in charge controlled memristors. The effects of parasitic resistance and capacitance on the dynamic characteristics of memristor are studied by using the dynamic route map and simulation method. The oretical and simulation analysis shows that the ideal charge controlled (current controlled) memristor does not have fading memory when the parasitic resistance or capacitance exists alone under the excitation of DC and AC, but fading memory occurs when the parasitic resistance and capacitance exist at the same time. The mechanism is that the parasitic elements form discharge path, which leads to fading memory of the charge controlled memristor.
- Memristor,
- Fading memory,
- Parasitic effects

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References(18)

References

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