A Method for AlGaN/GaN HEMT Nonlinear Device Model Parameter Extraction

CHANG Yongming; MAO Wei; DU Lin; HAO Yue

doi:10.11999/JEIT170097

Volume 39 Issue 12

Dec. 2017

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CHANG Yongming, MAO Wei, DU Lin, HAO Yue . A Method for AlGaN/GaN HEMT Nonlinear Device Model Parameter Extraction[J]. Journal of Electronics & Information Technology, 2017, 39(12): 3039-3044. doi: 10.11999/JEIT170097

Citation:

CHANG Yongming, MAO Wei, DU Lin, HAO Yue . A Method for AlGaN/GaN HEMT Nonlinear Device Model Parameter Extraction[J]. Journal of Electronics & Information Technology, 2017, 39(12): 3039-3044. doi: 10.11999/JEIT170097

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A Method for AlGaN/GaN HEMT Nonlinear Device Model Parameter Extraction

doi: 10.11999/JEIT170097

Funds:

The National Natural Science Foundation of China (61574112), The Natural Science Foundation Research Project of Shaanxi Provience (605119425012)

Received Date: 2017-01-24
Rev Recd Date: 2017-09-18
Publish Date: 2017-12-19

Abstract

Abstract

A new absolute error function is presented in this paper. The function is applied to extract parameters of the nonlinear model, which can avoid the calculation error and reduce the inaccurate parameter extraction significantly. Nitride semiconductor devices are widely used, especially the AlGaN/GaN HEMT devices. The AlGaN/GaN HEMT model and parameters is very important to radio frequency, power electronic devices and circuit design. The new absolute error function is applied to extract the parameters of AlGaN/GaN HEMT nonlinear devices model. Through comparing three kinds of error function, the results show that the proposed error function is more accurate and effective. At the same time, a precise and effective method is provided to extract the parameters of electronic devices in the future.
- AlGaN/GaN HEMT,
- Absolute error function,
- Parameter extraction,
- Genetic algorithm

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References(20)

References

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