Bias Temperature Instability-aware Soft Error Rate Analysis

WANG Zhen; JIANG Jianhui; CHEN Naijin

doi:10.11999/JEIT161113

Volume 39 Issue 7

Jul. 2017

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Article Navigation > Journal of Electronics & Information Technology > 2017 > 39(7): 1640-1645

WANG Zhen, JIANG Jianhui, CHEN Naijin. Bias Temperature Instability-aware Soft Error Rate Analysis[J]. Journal of Electronics & Information Technology, 2017, 39(7): 1640-1645. doi: 10.11999/JEIT161113

Citation:

WANG Zhen, JIANG Jianhui, CHEN Naijin. Bias Temperature Instability-aware Soft Error Rate Analysis[J]. Journal of Electronics & Information Technology, 2017, 39(7): 1640-1645. doi: 10.11999/JEIT161113

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Bias Temperature Instability-aware Soft Error Rate Analysis

doi: 10.11999/JEIT161113

Funds:

The National Natural Science Foundation of China (61432017, 61404092), The Talented People Introduction Foundation of Shanghai University of Electric Power (K-2013-017), The Excellent University Young Teachers Training Program of Shanghai Municipal Education Commission (Z2015-074), The Project of Shanghai Science and Technology Committee Grant (15110500700)

Received Date: 2016-10-20
Rev Recd Date: 2017-03-23
Publish Date: 2017-07-19

Abstract

Abstract

Under nano-scaled technology, the Integrated Circuit (IC) reliability issues caused by both aging mechanism and soft error become very critical. In this paper, from critical charge and delay points of view, the effects of Bias Temperature Instability (BTI), including Negative BTI (NBTI) and Positive BTI (PBTI), on Soft Error Rate (SER) are analyzed. Firstly, how BTI affects critical charge and delay is focused on. The delay increasing model is derived, and the critical charge changing procedure is introduced. Further, using the derived SER computational model considering critical charge, and mapping the changed delay into electrical mask procedure, the SER is accurately calculated. Experimental results on ISCAS89 benchmark circuits show that, considering two factors of BTI, SER estimation has high accuracy.
- Integrated Circuit (IC),
- Bias Temperature Instability (BTI),
- Soft Error Rate (SER),
- Critical charge value,
- Delay

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References(21)

References

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