Design of High-density Mask ROM Based on Diode Cells

YE Yong; KANG Yong; SONG Zhitang; CHEN Bangming

doi:10.11999/JEIT160938

Volume 39 Issue 6

Jun. 2017

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Article Navigation > Journal of Electronics & Information Technology > 2017 > 39(6): 1452-1457

YE Yong, KANG Yong, SONG Zhitang, CHEN Bangming. Design of High-density Mask ROM Based on Diode Cells[J]. Journal of Electronics & Information Technology, 2017, 39(6): 1452-1457. doi: 10.11999/JEIT160938

Citation:

YE Yong, KANG Yong, SONG Zhitang, CHEN Bangming. Design of High-density Mask ROM Based on Diode Cells[J]. Journal of Electronics & Information Technology, 2017, 39(6): 1452-1457. doi: 10.11999/JEIT160938

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Design of High-density Mask ROM Based on Diode Cells

doi: 10.11999/JEIT160938

1.
(Shanghai Institute of Microsystem And Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)
2.
(Shanghai Xinchu Integrated Circuit Incorporation, Shanghai 200122, China)

Funds:

Strategic Priority Research Program of the Chinese Academy of Sciences (XDA09020402), The National Key Basic Research Program of China (2013CBA01904, 2013CBA01900, 2010CB934300, 2011CBA00607, 2011CB932804), The National Integrate Circuit Research Program of China (2009ZX02023-003), The National Natural Science Foundation of China (61076121, 61176122, 61106001, 61261160500, 61376006)

Received Date: 2016-09-19
Rev Recd Date: 2017-01-22
Publish Date: 2017-06-19

Abstract

Abstract

Since the traditional Read-Only Memory (ROM) has the problems of low density and high power consumption, a mask ROM based on diode cells and contact-programming process is proposed. With dual-trench isolation process and borderless contact scheme, the diode array can realize ultrahigh density. Based on the proposed novel diode array, a mask ROM macro with 2 Mb capacity is designed, which contains 8 256 kb sub-arrays. The diode arrays are fabricated with 40 nm design rule and the peripheral logic circuits are achieved in 2.5 V CMOS process. The effective area of the diode cell is only 0.017 m2 and the density of the diode array is 0.0268 mm2/Mb. Test results show that the cell feature of diodes is good and the bit yield of the 2 Mb ROM achieves 99.8% under 2.5 V supply voltage.
- Mask Read-Only Memory (ROM),
- Diode array,
- High-density,
- Low power,
- Dual-trench isolation process

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References(17)

References

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