面向X波段有源相控阵T/R组件的低成本高隔离度射频开关设计

李盼; 段创维; 朱闻柏; 杨利霞; 廖桂生

doi:10.11999/JEIT260326

面向X波段有源相控阵T/R组件的低成本高隔离度射频开关设计

doi: 10.11999/JEIT260326 cstr: 32379.14.JEIT260326

安徽大学光电信息获取与防护技术全国重点实验室合肥 230601

基金项目: 国家自然科学基金(62501001)，国家重点研发计划(2024YFB3908202)，安徽省自然科学基金(2508085QF236)，中国博士后科学基金会面上项目(2025M780492)，安徽博士后科研项目 (2026A1274)

详细信息

作者简介:
李盼：女，讲师，研究方向为电磁超表面及其隐身技术

段创维：男，硕士生，研究方向为时间调制阵列、相控阵隐身技术

朱闻柏：男，硕士生，研究方向为频率分集阵列、相控阵隐身技术

杨利霞：男，教授，研究方向为电磁散射与逆散射、现代天线理论与设计

廖桂生：男，教授，研究方向为雷达信号处理

通讯作者:
廖桂生　liaogs@xidian.edu.cn

中图分类号: TN62
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出版历程
- 收稿日期: 2026-03-23
- 修回日期: 2026-09-08
- 录用日期: 2026-09-15
- 网络出版日期: 2026-09-20

Design of a Low-Cost High-Isolation RF Switch for X-Band Active Phased Array T/R Modules

National Key Laboratory of Photoelectric Information Acquisition and Protection Technology, Anhui University, Hefei 230601, China

Funds: The National Natural Science Foundation of China (62501001), The National Key R&D Program of China (2024YFB3908202), Anhui Provincial Natural Science Foundation (2508085QF236), The General Program of the China Postdoctoral Science Foundation (2025M780492), Anhui Postdoctoral Scientific Research Program Foundation (2026A1274)

摘要

摘要: 针对低成本PIN二极管在X波段因寄生参数、接地通孔寄生效应导致开关隔离度降低与插入损耗增加的问题，该文提出一种基于寄生参数补偿的X波段低成本高隔离度并联型射频开关电路设计方法。所提方法通过引入补偿短截线与T型结等效结构电容，分别抵消不同工作状态下的寄生电抗，解决了低成本器件的高频性能恶化问题。实测结果表明，该射频开关电路在9.5～10.4 GHz频段内回波损耗优于10 dB，隔离度高于20 dB，插入损耗低于2 dB。该设计具有结构简单、易于集成、成本较低等优势，验证了低成本二极管用于X波段高隔离度T/R组件射频开关的可行性。
- 有源相控阵 /
- T/R组件 /
- 高隔离度射频开关电路 /
- 寄生参数补偿
Abstract: Objective Radio Frequency (RF) switches are critical front-end components in communication and radar systems, especially in active phased array Transmit/Receive (T/R) modules, where their insertion loss, isolation, and power-handling capability directly affect system performance. Positive-Intrinsic-Negative (PIN) diodes are widely used in high-power microwave switches because of their high power-handling capability, good linearity, and mature fabrication process. However, low-cost plastic-packaged PIN diodes suffer from considerable parasitic effects at X-band frequencies. The junction capacitance, package inductance, and grounding-via inductance introduce deviations from ideal short- or open-circuit conditions in shunt branches, resulting in increased signal leakage, degraded isolation, and higher insertion loss. Therefore, this paper proposes a low-cost high-isolation X-band Single-Pole Double-Throw (SPDT) RF switch design method based on parasitic-parameter compensation to improve the high-frequency performance of low-cost PIN diode switches. Methods A step-wise synergistic matching strategy, termed “OFF-state prioritized determination and ON-state structural compensation”, is proposed. OFF-state isolation and ON-state transmission conditions are treated separately to reduce coupling between isolation and transmission objectives. First, the OFF-state isolation condition is determined by combining the diode parasitic parameters, compensation stub, and grounding-via inductance to construct a series-resonant network. By compensating the parasitic reactance of the isolation branch, the required impedance condition is satisfied, thereby suppressing signal leakage through the isolated path. After determining the compensation-stub parameters, ON-state structural compensation is further implemented by introducing equivalent capacitance through T-junction edge effects and a stepped-impedance main line. The introduced structural capacitance compensates for the equivalent inductance of the shunt branch and forms a parallel-resonant network, allowing the branch impedance to approach an open-circuit condition at the operating frequency. Thus, signal shunting is reduced and low-insertion-loss transmission is achieved without introducing additional lumped compensation components. Results and Discussions The proposed switch topology is established, and a full-wave simulation model is developed (Fig. 3, Fig. 4(a)). Simulation results demonstrate that the designed switch achieves a return loss better than 20 dB, an isolation higher than 20 dB, and an insertion loss of approximately 0.2 dB within 8.57～9.34 GHz (Fig. 4(b)). A prototype is fabricated and experimentally characterized (Fig. 5). Measurement results indicate that, within 9.5～10.4 GHz, the return loss is better than 10 dB, the insertion loss is lower than 2 dB, and the isolation exceeds 20 dB (Fig. 6). Although the measured operating band shifts upward by approximately 1 GHz compared with the initial simulation results, the measured variation trends agree well with the theoretical analysis. To investigate the frequency shift, the effects of OFF-state junction capacitance and ON-state parasitic inductance are further analyzed. When the OFF-state junction capacitance decreases from 0.24 pF to 0.195 pF, the high-isolation frequency band shifts toward higher frequencies (Fig. 7(a)). With the OFF-state capacitance fixed at 0.195 pF, reducing the ON-state parasitic inductance from 0.7 nH to 0.2 nH also shifts the return-loss response toward higher frequencies (Fig. 7(b)). After correcting the parasitic parameters, the simulated return loss, insertion loss, and isolation show improved agreement with the measured results (Fig. 6). Compared with existing SPDT RF switch designs, the proposed design employs low-cost plastic-packaged PIN diodes and a simple microstrip compensation structure, eliminates the need for additional lumped compensation components, reduces dependence on the intrinsic high OFF-state impedance of PIN diodes, and provides an effective trade-off between manufacturing cost and high-frequency switch performance (Table 1). Conclusions A low-cost high-isolation X-band SPDT RF switch based on parasitic-parameter compensation is proposed and experimentally verified. The proposed design combines OFF-state series resonance with ON-state structural capacitance compensation to simultaneously achieve high isolation and low insertion loss. The fabricated switch achieves an isolation higher than 20 dB and an insertion loss lower than 2 dB over 9.5～10.4 GHz. Owing to its simple structure, low cost, and ease of integration, the proposed switch provides a practical solution for low-cost high-isolation RF switches for T/R modules in active phased array systems.
- Active phased array /
- Transmit/Receive (T/R) modules /
- High-isolation Radio Frequency (RF) switch circuit /
- Parasitic parameter compensation

HTML全文

图 1 无补偿并联型SPDT开关电路及PIN二极管等效模型

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图 2 基于不同PIN二极管的无补偿并联型SPDT开关仿真结果

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图 3 开关电路结构拓扑

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图 4 开关电路模型与仿真结果

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图 5 加工实物与测试环境

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图 6 测试与仿真结果

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图 7 寄生参数敏感性仿真结果

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表 1 本文工作与现有SPDT射频开关方案的性能对比

文献	器件与技术路线	工作频率(GHz)	插入损耗(dB)	回波损耗(dB)	隔离度(dB)	成本	高阻抗依赖
[9]	GaAs pHEMT晶体管+ 电容加载堆叠FET结构	DC～40	<3	>11	>39	高	未涉及
[10]	塑封PIN二极管+ 集总RLC补偿与匹配网络	1.02～3.36	<0.81	>20	>27	中	是
[11]	GaAs PIN二极管+ 多管串联结构	37.7～61	<1.5	>10	>24.6	高	是
[12]	CMOS晶体管+ 差分结构与泄漏抵消电容	24～40	<1.6	>10	>30	高	未涉及
本文	塑封PIN二极管+ 微带结构补偿	9.5～10.4	<2	>10	>20	低	否

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参考文献(21)

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