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纳米技术21世纪的基础工艺技术

张志健

张志健. 纳米技术21世纪的基础工艺技术[J]. 电子与信息学报, 1995, 17(6): 631-637.
引用本文: 张志健. 纳米技术21世纪的基础工艺技术[J]. 电子与信息学报, 1995, 17(6): 631-637.
Zhang Zhijian. NANOTECHNOLOGYAN ESSENTIAL TECHNOLOGY IN THE 21-TH CENTURY[J]. Journal of Electronics & Information Technology, 1995, 17(6): 631-637.
Citation: Zhang Zhijian. NANOTECHNOLOGYAN ESSENTIAL TECHNOLOGY IN THE 21-TH CENTURY[J]. Journal of Electronics & Information Technology, 1995, 17(6): 631-637.

纳米技术21世纪的基础工艺技术

NANOTECHNOLOGYAN ESSENTIAL TECHNOLOGY IN THE 21-TH CENTURY

  • 摘要: 本文概述了钠米技术的国际发展动态。并以国家自然科学基金八五期间支持的一个重大基金和一个重点基金项目所取得的成果为主,叙述了国内在纳米技术领域的研究现状,特别介绍了中国科学院真空物理实验室在单原子操作方面所作的杰出的工作。并对今后这一领域的发展提出了一些粗浅的看法。
  • RESEACH, SEVICE, FACILITES, National Institute of StandardsTechnology (N1ST), U.S.A. 1992. 47.[2]Becker R S, et al.[J]. Nature.1987,325:419-[3]Lyo 1 W, Avouris P. Science, 1991, 23:173.[4]Carter F L. Moleculae Electronic Deices. New YorkBassel: Marcet Dekker, lnc 1982.[5]Adey W R, Lawrence A F. Nonlinear Electrodynamics in Biological Systems, New Yotk and London:Plenum Press, 1994.[6]韦钰,方际宇.Mol. Cryst. Liq. Cryst, 1992, 210: 4963-4965.[7]方际宇,陆祖宏,闵光伟,等.Phys[J]., Rev. A.1992, 46(6):4963-4965[8]方际宇,陆祖宏,王林,等.Phys[J]., Lett. A.1992, 166:373-376[9]游效曾,巢启荣,生龙根.化学通报,1989,(11); 7.[10]李村,彭新,巢启荣,等.[J].Synthesis ana Reactivity in Inorganic Metal-Organic Chemis try.1990,20(9):1131-[11]胡坤生,王敖金,谈曼其,等.科学通报,1990,15(36): 1182.[12]Keming Chen. Guohua Li, Huiyun Lu, et al. Influence of Total Hydrogen Content in Silicon[13]Nitride Sensitive Film on Performances of ISFET. Senair[14]and Actuslltors B. 1992,1(12):23-27.[15]Jiang L, Hoenig D, Moebius D. Chinese Chemical Letters, 1992,3(3):219-222.[16]王少鹏,隋森芳.生物物理学报,1991,3(7): 328.[17]Jun Guo, Yu Xu, Daoben Zhu, et al. Chemical Physics Letters, 1992, 5/6(195):625.[18]Liu N.[J].Ma Z, Chu X, et al. Diamond Tips and Their Applications, Received by STM93, International Conference on Scanning Tunneling Microscopy, Aug. 3-1.1993,:-et al. Diamond Tips and Their Applications, Received by STM' target='_blank'>[19]Xing Chu, Zili Ma, Ning Liu, et al. Appl, Phys. Lett., 1993, 25(63):3446.[20]Zhipeng Chang, Zili Ma, Jian Shun, Xing Chu, et al. Applid Surface Science, 1993. (70/71):[21]7-412.[22]Zili Ma, Qianjun Gu, Ning Liu, et al. Nanometer Scale Directly Written[23]on (111) 7 X 7 Suface Using STM, Reported in the First Asian Workshop[24]on Scanning Tunneling Microscopy, Japan: 1994.[25]Ning Liu, Qianjun Gu, Riang Ge, et al. Observation of secer[26]types of domain boundaries on[27]Si(111)7 X 7 surface by STM. Reported in the first Asian Workshop on[28]Scanning Tunneling Microscopy, Japan: 1994.
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出版历程
  • 收稿日期:  1994-09-26
  • 修回日期:  1995-04-04
  • 刊出日期:  1995-11-19

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