Zn在Ge中扩散的研究
STUDY OF THE DIFFUSION OF Zn INTO Ge
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摘要: 用Zn作扩散源在封闭的真空石英管中,研究了Zn在Ge中的扩散问题,给出了xj-t1/2关系和C-1/T关系,比较了扩散源温度对样品表面形貌的影响。采用双温区扩散工艺可获得表面光亮的样品。采用真空退火工艺可使扩散样品表面漏电流降低。
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关键词:
Abstract: In this report the diffusion of Zn into Ge is investigated. The experiments are accomplished in an evacuated and sealed quartz ampoule using Zn as the diffusion source. The xj-t1/2 and C-1/T has been given. The influence of the source temperature on rhe curface micro-graph has been given. It is found that using two-temperature process a smooth surface layer can be obtained. -
G. E. Stillman et. al.,Appl. Phys. Lett., 24(1974), 8.[2]Tokuzo Sukegawa et. al., ibid., 32(1978), 376.[3]C. A. Armiento et. al.,ibid., 34(1979), 229.[4]T. Kaneda et. al., ibid., 34(1979), 866.[5]谢希德,方俊鑫,固体物理学〔上册),上海科学技术出版社,1961,139. -
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