射频低噪声放大器提高三阶交截点方法探讨

赵巾翔; 汪峰; 于汉超; 王魁松; 张胜利; 梁晓新; 阎跃鹏

doi:10.11999/JEIT211164

射频低噪声放大器提高三阶交截点方法探讨

doi: 10.11999/JEIT211164

赵巾翔^{1, 2},
汪峰³,
于汉超⁴,
王魁松^{1, 5},
张胜利^{1, 2},
梁晓新^{1, 5, ,},
阎跃鹏^{1, 5}

1.
中国科学院微电子研究所北京 100029
2.
中国科学院大学微电子学院北京 100049
3.
中国科学院重大科技任务局北京 100864
4.
中国科学院前沿科学与教育局北京 100864
5.
北京市新一代通信射频芯片技术重点实验室北京 100020

基金项目: 国家重点研发计划(E0G928C001)

详细信息

作者简介:
赵巾翔：男，博士生，研究方向为射频微波集成电路设计及其模块

汪峰：男，博士，研究方向为集成电路

于汉超：男，博士，研究方向为集成电路

王魁松：男，硕士，研究方向为射频微波集成电路设计及其模块

张胜利：男，硕士生，研究方向为射频微波集成电路设计及其模块

梁晓新：女，博士，研究方向为射频微波集成电路设计及其模块

阎跃鹏：男，博士，研究方向为射频微波集成电路设计及其模块

通讯作者:
梁晓新　liangxiaoxin@ime.ac.cn

中图分类号: TN43
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- 被引次数: 0
出版历程
- 收稿日期: 2021-10-25
- 修回日期: 2022-05-15
- 网络出版日期: 2022-05-20
- 刊出日期: 2023-01-17

Discussion on Improving the Third Order Intersection Point of Radio Frequency Low Noise Amplifier

ZHAO Jinxiang^{1, 2},
WANG Feng³,
YU Hanchao⁴,
WANG Kuisong^{1, 5},
ZHANG Shengli^{1, 2},
LIANG Xiaoxin^{1, 5
, ,},
YAN Yuepeng^{1, 5}

1.
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2.
School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
3.
Bureau of Major R & D Programs, Chinese Academy of Sciences, Beijing 100864, China
4.
Bureau of Frontier Sciences and Education, Chinese Academy of Sciences, Beijing 100864, China
5.
Beijing Key Laboratory of New Generation Communication RF Chip Technology, Beijing 100020, China

Funds: The National Key R&D Program of China (E0G928C001)

摘要

摘要: 随着现代通信技术的进步，特别是4G,5G等无线移动通信的高速发展，多正交振幅调制(QAM)等高频谱利用率的调制方式得到广泛应用，对无线通信系统提出了更高、更严格的线性要求。射频低噪声放大器(RF LNA)作为射频前端(RF FEM)的第1个有源器件，其非线性特征直接影响系统的信号质量和动态范围。以3阶交调为例，低噪声放大器需要足够的输入3阶交截点，以确保即使在强干扰信号下也能提供预期的性能。基于3阶非线性模型，该文简要分析了3阶交调的理论模型，梳理了提高3阶交截点的方法，归纳研究了近年来相关的研究成果与进展，并展望了未来的发展趋势。
- 无线通信 /
- 射频低噪声放大器 /
- 高线性 /
- 3阶交截点
Abstract: With the progress of modern communication technology, especially the rapid development of 4G, 5G and other wireless mobile communications, modulation methods with high spectrum efficiency such as multi-Quadrature Amplitude Modulation (QAM) have been widely used, which puts forward higher and stricter linear requirements for wireless communication systems. The Radio Frequency Low Noise Amplifier(RF LNA)is the first active device of the RF Front-End Module(RF FEM), and the signal quality and dynamic range of the system are directly affected by the the nonlinear characteristics of the LNA. Taking the 3^rd-order intermodulation as an example, a sufficient input 3^rd-order intercept point is required in LNA to ensure expected performance even with strong interfering signals. Based on the 3^rd-order nonlinear model, in this article, the theoretical model of the 3^rd-order intermodulation is analyzed briefly, the methods to improve the 3^rd-order intercept point are sorted out, the relevant research results and progress in recent years are summarized and studied , and the future development trend is prospected.
- Wireless communication /
- Radio Frequency Low Noise Amplifier(RF LNA) /
- High linearity /
- Third order intercept point

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图 1 交调信号频谱

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图 2 基于弱非线性模型的3阶截断点

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图 3 最佳栅极偏置技术

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图 4 导数叠加技术

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图 5 广义DS结构^[50]

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图 6 改进DS方法

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图 7 WRDS技术g₃抵消窗口^[65]

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图 8 预失真原理框图

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图 9 FET预失真电路

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图 10 有源后失真线性技术^[83]

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图 11 前馈技术系统框图

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图 12 反馈技术系统框图

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表 1 提高IIP₃方法对应发挥作用的非线性项

方法	最佳栅极偏置技术	传统导数叠加技术	改进导数叠加技术	互补\|差分导数叠加	预失真电路	后失真电路	前馈技术	反馈技术
g₂				△	△	△	△	△
g₃	△	△	△	△	△	△	△	△
g₂混叠			△
高阶非线性(>3)							△	△

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表 2 不同线性化方法对比

技术方法	文献来源	工艺节点	频率(GHz)	IIP₃ △IIP₃(dBm)	NF △NF(dB)	Gain △Gain(dB)	Power △Power(mW)
最佳栅极偏置技术	ISCAS 2004 ^[43]	0.25 μm CMOS	0.880	10.5\|NA	1.8\|NA	14.6\|NA	5.4\|NA
传统导数叠加技术	ISSCC 2003^[51]	0.25 μm CMOS	2.000	16.0\|+13	2.8\|–0.1	14\|–0.8	9.4\|–1.4
改进导数叠加技术	TMTT 2005^[60]	0.25 μm CMOS	0.900	22.0\|+20.0	1.65\|–0.25	15.5\|–0.5	9.3\|–0.3
互补\|差分导数叠加	ISSCC 2009^[66]	0.18 μm CMOS	0.100～1.200	10.6～14.3	2.9–3.5	17.5	21.3
预失真电路	TCSII 2006^[77]	0.13 μm CMOS	5.000	19.7\|+11.3	1.59\|–0.45	10.6\|–1	15.4\|–0.1
后失真电路	JSSC 2006 ^[83]	0.25 μm CMOS	0.869～0.894	8.0\|+5.75	1.2\|–0.15	16.2\|–1.3	31.2\|
前馈技术	ISSCC 2001 ^[89]	0.35 μm CMOS	0.900	5.0\|+13.0	2.6\|–0.2	18\|–2.5	22.5\|–11.25
负反馈技术	ASSCC 2006 ^[101]	0.09μm CMOS	0.500～6.500	–8.0\|+6^a	2.5\|+0.5^a	23\|–2^a	21\|+21^a
注：表中符号+表示性能优化，–表示恶化。a：所列对比指标为该文献与其前期已发表工作^[107]的指标对比。

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表 3 不同线性化方法总结

技术方法	PVT敏感	宽带适用	工程应用情况与指导意义
最佳栅极偏置技术	强	差	受频率、环境等因素限制，较少单独使用，一般与其他方法技术相结合。
传统导数叠加技术	较强	适中	存在输入信号功率范围窄、影响输入等问题，其改进型应用更为广泛。
改进导数叠加技术	适中	较好	改善了DS 2阶互调、输入功率范围等限制短板，进一步拓展了DS技术的适用范围。
互补\|差分导数叠加	适中	较好	从结构上可以抑制2阶非线性的问题，且更适用于宽带应用，但易受电路失配等影响。
预失真电路	较弱	好	预失真电路原理简单，其实现结构往往也不复杂，具有较好的宽带、工艺拓展性。使用中需要综合考虑噪声、功耗等指标的限制。
后失真电路	较弱	好	适合宽带高线性应用，使用中需要用中通常需要综合考虑面积、功耗等限制。
前馈技术	较强	好	可实现高阶非线性抵消，同时适合宽带应用。但难以满足面积小、低功耗的设计需要。
负反馈技术	较弱	好	适用于宽带应用，受环境因素变化影响小，使用灵活，易于和其他电路结构相结合。需格外注意对噪声的影响。

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