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忆阻开关混沌电路及其吸引子共存现象研究

马铭磷 刘颖 李志军

马铭磷, 刘颖, 李志军. 忆阻开关混沌电路及其吸引子共存现象研究[J]. 电子与信息学报, 2021, 43(12): 3758-3765. doi: 10.11999/JEIT200689
引用本文: 马铭磷, 刘颖, 李志军. 忆阻开关混沌电路及其吸引子共存现象研究[J]. 电子与信息学报, 2021, 43(12): 3758-3765. doi: 10.11999/JEIT200689
Minglin MA, Ying LIU, Zhijun LI. Study on Coexistence of Multipe Attractors in Memristor-based Switching Chaotic Circuits[J]. Journal of Electronics & Information Technology, 2021, 43(12): 3758-3765. doi: 10.11999/JEIT200689
Citation: Minglin MA, Ying LIU, Zhijun LI. Study on Coexistence of Multipe Attractors in Memristor-based Switching Chaotic Circuits[J]. Journal of Electronics & Information Technology, 2021, 43(12): 3758-3765. doi: 10.11999/JEIT200689

忆阻开关混沌电路及其吸引子共存现象研究

doi: 10.11999/JEIT200689
基金项目: 国家重点研发计划(2018AAA0103300)
详细信息
    作者简介:

    马铭磷:男,1978年生,副教授,研究生导师,研究方向为射频集成电路设计、非线性电路与系统

    刘颖:女,1997年生,硕士生,研究方向为开关电路系统非线性动力学

    李志军:男,1973年生,教授,研究生导师,研究方向为非线性电路与系统、数模混合集成电路

    通讯作者:

    马铭磷 minglin_ma@xtu.edu.cn

  • 中图分类号: TN601

Study on Coexistence of Multipe Attractors in Memristor-based Switching Chaotic Circuits

Funds: The National Key Research and Development Project(2018AAA0103300)
  • 摘要: 为了研究忆阻开关电路的动力学行为,该文提出一种具有多吸引子共存现象的忆阻开关混沌电路。在该电路中存在多吸引子分岔,当系统中发生边界碰撞之后,系统中将产生不同的吸引子共存现象。其中包括单周期极限环与混沌吸引子共存,不同的混沌吸引子共存,对称的2周期极限环共存现象,以及对称的2周期极限环与5周期极限环共存现象等。该文通过相图、分岔图等数值仿真,分析了该电路的动力学行为,并利用PSIM电路仿真验证了其电路的可行性,对开关电路中多吸引子共存现象和混沌应用的研究具有重要意义。
  • 图  1  忆阻开关混沌电路图

    图  2  忆阻器RM等效电路

    图  3  开关电路的工作状态电路图

    图  4  电路时序波形图

    图  5  状态变量Z随参数E变化的系统共存分岔图

    图  6  随参数E变化的X-Z相轨图

    图  7  PSIM仿真电路原理图

    图  8  电路的PSIM仿真时序波形图

    图  9  电路的PSIM仿真相图

    表  1  忆阻开关混沌电路的参数选取

    参数 名称 取值
    C1, C2 电容 10 nF
    L 电感 20 mH
    R 电阻 100 $\Omega $
    RC 电阻 30 $\Omega $
    Vref 参考电压 1 V
    Ra, Rb 电阻 1 k $\Omega $
    Rd 电阻 30 $\Omega $
    C0 电容 20 nF
    p 比例因子 –0.5
    下载: 导出CSV
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出版历程
  • 收稿日期:  2020-08-06
  • 修回日期:  2021-03-06
  • 录用日期:  2021-03-09
  • 网络出版日期:  2021-04-25
  • 刊出日期:  2021-12-21

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