非晶硅肖特基太阳电池的I-V特性分析
THE I-V CHARACTERISTIC ANALYSIS OF SCHOTTKY AMORPHOUS SILICON SOLAR CELLS
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摘要: 本文提出了一种在光照和短路条件下测量Ni/-Si∶H肖特基结势垒宽度的方法。同时,又在实验确定的参数的基础上,从理论上计算了在AM1太阳光谱照射下Ni/-Si∶H太阳电池的I-V曲线。由此得到的非晶硅少子扩散长度的数值与作者1983年用表面光电压法(SPV)测得的是一致的。从计算结果出发,着重分析了影响填充因子的各种因素。与实验对比可以得出结论:被测太阳电池的填充因子小是串、并联电阻造成的,而不是扩散长度太短的缘故。
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Abstract: The present paper introduces an experimental method for measuring the width of illuminated and short-circuited Ni/a-Si: H Schottky barriers. The current-voltage curves for the Schottky barrier solar cells under AM1, 100 mW/cm2 illumination are caleulated by using the parameters determined by experiments. The diffusion length of holes in a-Si:H obtained from the illuminated I-V curve is consistent with the results measured by the author with the surface photovoltage method in 1983. The factors affeeting the fill factor are analysed on the basis of the calculated results. A comparison of the calculated results to the experiment's reveals that the very low fill factor of the solar cells measured is due to series and shunt resistances rather than the low diffusion length of the holes. -
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